射频功率对F-DLC薄膜结构及场发射性能的影响  

Effect of RF Power on Field Emission Characteristics of Fluorinated Diamond-Like-Carbon Films

作　　者：蒋爱华[1] 邵红娟[1] 杨端翠[1] 肖剑荣[1] 

机构地区：[1]桂林理工大学理学院,桂林541004

出　　处：《真空科学与技术学报》2014年第5期538-542,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金资助项目(11064003;11364011);广西区自然科学基金项目(2010GXNSFA013122)

摘　　要：采用射频等离子体化学增强型气相沉积法,以CF4和CH4为源气体,氩气为载气,在不同射频功率下制备了掺氟类金刚石(F-DLC)薄膜样品。用原子力显微镜观测了样品的表面形貌,用X射线光电能谱仪及拉曼光谱仪等表征方法对样品的键合结构进行了测试、分析。结果显示:薄膜表面致密均匀,射频功率增加,薄膜表面均方根粗糙度增大,膜内sp2杂化结构相对含量增加。样品的场发射性能测试显示:高射频功率下制备的F-DLC薄膜样品的场发射阈值低,场发射电流密度升高。其主要原因是:随着射频功率的增加,薄膜的表面粗糙度增大及薄膜的石墨化程度增加引起。The fluorinated diamond-like-carbon（ F-DLC） thin films were grown by radio frequency plasma enhancedchemical vapor deposition（ RF-PECVD）. The impacts of the deposition conditions,including the RF power, ratio of CF4 and CH4flow rates,and deposition rate,on the microstructure and properties of the F-DLC were evaluated. The films were characterized with atomic force microscopy,X-ray photoelectron spectroscopy,and Raman spectroscopy. The results show that F-doping and RF power have a major impact on the F-DLC films. For example,as the RF power increased,the smooth and compact surfaces became slightly rougher,accompanied with an increase of sp2 structure; and its field emission current density increased but the onset voltage decreased,possibly because of surface roughening and graphitization.

关 键 词：F-DLC薄膜 射频功率 表面形貌 键合结构 场发射性能 

分 类 号：TN304[电子电信—物理电子学]