MOCVD法生长InAlN材料及其微结构特性研究  

Study of InAlN thin films and microstructures grown by MOCVD

作　　者：董逊[1] 倪金玉[1] 李亮[1] 彭大青[1] 张东国[1] 李忠辉[1] 

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《功能材料》2014年第B06期104-106,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61076120;61106130);江苏省自然科学基金资助项目(BK2012516)

摘　　要：利用MOCVD法,在7.62cm蓝宝石衬底上生长了InAlN薄膜及InAlN/GaN异质结材料。利用XRD、AFM、Hall等测试方法对材料的组分、表面形貌、电学性质等进行了分析,InAlN薄膜中In含量随生长温度的升高明显降低,材料表面为三维岛状结构;与AlGaN/GaN异质结材料相比,InAlN/GaN异质结的高温电子输运特性更好,773K下InAlN/GaN异质结的迁移率为130cm2/(v·s),明显高于AlGaN/GaN异质结的67cm2/(v·s)。InAlN thin films and microstructures were grown on 7.62 cm sapphire substrates by MOCVD.In con-tent,surface morphology,electronic properties were characterized by XRD,AFM and Hall.The results indicated that the In content decrease with increasing growth temperature and the surface of the InAlN film was three di-mensional like.High temperature hall tests showed that high temperature electron mobility was much higher for InAlN/GaN compared to AlGaN/GaN heterostructure.

关 键 词：MOCVD INALN 迁移率 

分 类 号：TB304[一般工业技术—材料科学与工程]