氧离子后处理对氧化铟锡(ITO)薄膜电学和光学性能的影响  

Influence of Oxygen Ions Post Treatment on Electrical and Optical Properties of Indium Tin Oxide(ITO) Thin Films

作　　者：郭向茹 周灵平[1] 彭坤[1] 朱家俊[1] 李德意[1] 

机构地区：[1]湖南大学材料科学与工程学院,长沙410082

出　　处：《人工晶体学报》2014年第5期1037-1042,共6页Journal of Synthetic Crystals

基　　金：湖南省战略性新兴产业重大科技攻关项目(2011GK4050)

摘　　要：采用氧离子束对电子束蒸发制备且退火后的氧化铟锡（ITO）薄膜进行轰击后处理。经XPS检测发现氧元素在薄膜内含量增加，在深度方向上的梯度差下降。表面Sn4＋含量增加，即掺杂离子浓度和载流子浓度提高，从而使薄膜方块电阻显著降低。当氧离子继续轰击时，薄膜的方块电阻保持平稳；同时，透过率曲线蓝移，紫外波段（300-400nm）的平均透过率提高而可见光范围内（400～800nm）的平均透过率略有下降，这种变化缘于薄膜的禁带宽度与折射率的增加。Indium tin oxide （ITO） thin films deposited by electron beam evaporation were bombarded by oxygen ions beam after annealing. XPS shows that oxygen content in films was increased and the gradient change of oxygen in depth was decreased. The content of Sn4~ increased, improving the dope-ion concentration and cartier concentration. So the sheet resistance of the films was made to decrease observably, and then remain steady with the bombardment time going on. Meanwhile, The blue shift of transmission curves was happened. The mean transmittance in ultraviolet band （300-400 nm ） was increased, and that in visible range （400-800 nm） decreased slightly. It results from the increase of the band gap and refractive index of films.

关 键 词：ITO薄膜 电子束蒸发 氧离子束 方块电阻 透过率 

分 类 号：O484[理学—固体物理]