磁控溅射PbSe薄膜厚度对其结构及光学特性的影响  

Effect of Thickness on Structure and Optical Properties of PbSe Thin Film Deposited by Magnetron Sputtering

作　　者：王晓阳[1] 冯文然[2] 周海[2] 姚静[1] 李健[1] 

机构地区：[1]北京化工大学材料科学与工程学院,北京100029 [2]北京石油化工学院材料科学与工程学院,北京102617

出　　处：《人工晶体学报》2014年第5期1105-1109,共5页Journal of Synthetic Crystals

基　　金：北京市自然科学基金(1112011)

摘　　要：本文利用射频磁控溅射法在200℃的玻璃衬底上沉积了纳米晶PbSe薄膜,薄膜厚度分别为200 nm、250 nm、500 nm及600 nm。利用X射线衍射仪(XRD)、原子力显微镜(AFM)及紫外-可见分光光度计,分别研究了不同厚度PbSe薄膜的晶体结构、表面形貌和光学特性。结果表明:随膜厚增大,PbSe(200)晶面的择优取向显著增强,薄膜的结晶质量逐渐提高。此外,随薄膜厚度增加吸收边发生红移。膜厚为200 nm、250 nm时,薄膜的禁带宽度为1.89 eV和1.60 eV;膜厚较大(500 nm及600 nm)时,带隙宽度减小至1.41 eV和1.34 eV,与太阳的光谱辐射更加匹配。因此,我们认为厚度较大的PbSe薄膜更适于用做太阳能电池的吸收层。Nanocrystalline PbSe thin films with thickness of 200 nm, 250 nm, 500 nm and 600 nm were deposited on glass substrates at 200℃ by RF magnetron sputtering. The crystal structure, morphology and optical properties of the PbSe films of various thicknesses were investigated by means of X-ray diffraction （XRD）, atomic force microscopy （AFM） and UV-Vis spectrophotometer, respectively. The results indicated that the preferred orientation in （200） plane is greatly intensified with increasing film thickness, and the crystalline quality is also gradually improved. In addition, the absorption band-edge red-shift is detected with increasing film thickness. The optical band gap values are 1.89 eV and 1.60 eV for films with thickness of 200 nm and 250 nm. While decreasing to 1.41 eV and 1.34 eV for thicker films （500 nm and 600 nm）, the optical band gas matches the solar spectrum. Therefore, we believe that the thicker PbSe films are more suitable as absorption layers for solar cells.

关 键 词：PbSe薄膜 磁控溅射 膜厚 光学性能 

分 类 号：TN304.2[电子电信—物理电子学]