MOCVD生长AlN的化学反应-输运过程数值模拟研究  

Numerical Simulation Study on Chemical Reaction-transport Process of AlN MOCVD Growth

作　　者：卢钦[1] 左然[1] 刘鹏[2] 童玉珍[2] 张国义[2] 

机构地区：[1]江苏大学能源与动力工程学院,镇江212013 [2]北京大学物理学院,北京100871

出　　处：《人工晶体学报》2014年第5期1179-1185,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61176009);国家重点基础研究发展计划(973计划)(2011CB013101)

摘　　要：针对垂直转盘式MOCVD反应器生长AlN的化学反应-输运过程进行数值模拟研究,特别探讨了反应室高度、操作压强和加合物衍生的三聚物对AlN生长的化学反应路径的影响。研究结果表明,AlN在MOCVD生长中以Al(CH3)3和NH3的加合路径为主,Al(CH3)3的热解路径很弱;加合路径衍生的二聚物是薄膜生长的主要前体,三聚物是纳米粒子的主要前体;降低反应室高度,寄生反应减弱,热解路径加强,使生长速率增大;增大压强,寄生反应加剧,使生长速率下降;添加由三聚物参加的表面反应后,生长速率提高了近4倍,证明三聚物不参加薄膜生长,只是提供纳米粒子前体。The numerical simulation study on the chemistry-transport process for the growth of A1N in a rotating disc MOCVD reactor has been carried out. The effects of the reactor height, pressure and the adduct-derived trimer on the growth of AlN chemical reactions are particularly investigated. The results show that the reaction pathway of A1N MOCVD growth is dominated by the adduct formation path of Al（CH3）3 and NH3, and the pyrolysis of Al（CH3）3 is weak. The adduct-derived dimer is the main film precursor; the trimer is the main precursor for nanoparticles. Lowering the reactor height can reduce the parasitic reaction, enhance the pyrolysis and increase the growth rate. Increasing the pressure can increase the parasitic reaction and reduce the growth rate. By adding the trimer contribution for the film growth, the growth rate increases nearly 4 times which verifies that the trimer does not contribute to the film growth, but only provides the nanoparticles.

关 键 词：MOCVD 化学反应 ALN 数值模拟 

分 类 号：TN304[电子电信—物理电子学]