微波退火对高k/金属栅中缺陷的修复  

Reparation of Defects in the High-k /Metal Gate Stack with Microwave Annealing

作　　者：陈玫瑰[1] 许鹏[1] 潘建峰[1] 吴东平[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海200433

出　　处：《半导体技术》2014年第6期428-433,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61176090)

摘　　要：研究了微波退火(MWA)对高k/金属栅中缺陷的修复作用。在频率为1和100 kHz下,对所有Mo/HfO2/Si(100)金属-绝缘体-半导体(MIS)结构样品进行C-V特性测试。通过在频率为100 kHz下测量的C-V特性曲线提取出平带电压与电压滞回窗口,从而估算出高k/金属栅中固定电荷密度和电荷陷阱密度,并用Terman方法计算出快界面态密度。通过研究在频率为1 kHz下测量的C-V特性曲线扭结,定性描述高k/金属栅中的慢界面态密度。结果表明,微波退火后,固定电荷、电荷陷阱、快界面态和慢界面态得到一定程度的修复。此外,和快速热退火相比,在相似的热预算下,微波退火可修复高k/金属栅中更多的固定电荷、慢界面态和电荷陷阱。但对于快界面态的修复,微波退火没有明显的优势。The reparation of defects in the high-k/metal gate stack with microwave annealing wasinvestigated. At the frequency of 1 kHz and 100 kHz, C-V curves for all samples with Mo/HfO2/Si （100） metal-insulator-semiconductor （MIS） structures were measured. The flat band voltage andhysteresis window were extracted from the measured C-V curves at the frequency of 100 kHz. The fixedcharge density and the charged traps density in the high-k/metal gate were estimated, and the density offast interface states was calculated with the Terman method. From the kinks on the C-V curves measuredat the frequency of 1 kHz, the density of slow interface states in the high-k/metal gate was qualitativelydescribed. The results show that after microwave annealing, the fixed charge, charged traps, fast inter-face states and slow interface states are repaired to some extent. In addition, at similar thermal budget,microwave annealing repairs more fixed charges, slow interface states and charged traps in the high-k/metal gate than rapid thermal annealing. However, for the reparation of the fast interface states, micro-wave annealing has no obvious advantage.

关 键 词：高k/金属栅 微波退火 缺陷修复 C-V测试 MoHfO2Si 

分 类 号：TN305[电子电信—物理电子学]