基于晶体三极管的不同中子能谱等效性实验研究  

Experiment study on equivalence of different neutron spectra based on transistors

作　　者：鲁艺[1] 邱东[1] 邹德惠[1] 荣茹[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,绵阳621900

出　　处：《核技术》2014年第6期60-65,共6页Nuclear Techniques

基　　金：中国工程物理研究院科技发展基金项目(No.2012B0103006)资助

摘　　要：辐射损伤等效性系数是评价不同中子能谱对样品的实验损伤差异的关键。利用晶体管直流增益的倒数与中子注量呈线性关系这一特点,采用参数一致性好的硅双极晶体管3DG121C作为位移损伤探测器,通过在线监测晶体管直流增益随累积中子注量的变化,分别获得了CFBR-II堆两个特定位置的损伤常数,推导出了不同中子能谱间的辐射损伤等效系数。结果表明,CFBR-II不同位置的辐射损伤没有显著差异。Background： The damage equivalence coefficient is the key factor to appraise the difference of radiation damage between different neutron spectra. Purpose： This research is to obtain the equivalence coefficient of radiation damage between two different neutron spectra. Methods： The silicon bipolar transistors （3DG121C） with good similarity of parameters have been employed as the displacement damage monitors based on the liner relationship between the reciprocal of direct current gain and the neutron flux. Results： The radiation damages of two sets of selected 3DG121C transists placed at the two special sites on CFBR-Ⅱ have been obtained by the in-situ on-line measuring of the change of gain with the accumulation of neutron flux, and the equivalence coefficient were deduced. Conclusion： The results show that the damage constants at different sites on CFBR-Ⅱ are of great similarity.

关 键 词：辐射效应 损伤常数 等效性系数 硅双极晶体管 快中子临界装置 

分 类 号：TL81[核科学技术—核技术及应用]