双侧金属接触半绝缘GaAs的电传输特性  

Charge Transport Properties of Semi-insulating GaAs with Two Metal Contacts

作　　者：张富强[1] 杨瑞霞[1] 付浚[1] 

机构地区：[1]河北工业大学电气信息学院,天津300130

出　　处：《河北工业大学学报》2000年第6期12-16,共5页Journal of Hebei University of Technology

基　　金：河北省自然科学基金资助项目!(5970437)

摘　　要：对双侧金属接触半绝缘ＧａＡｓ（ＭＳＭ）结构的电特性进行了模拟计算，包括不同外加偏压和不同载流子注入接触时的空间电荷分布以及电子和空穴电导率分布，在此基础上分析研究了接触处空间电荷区随外加电压的变化对这种结构的Ｉ－Ｖ特性的影响．In this article the electric characteristics of semi-insulating GaAs with two metal contacts (MSM) are calculated, including the distributions of the space-charge density and of electron and hole conductivities for different electron and hole-supplying contacts with different bias voltages. On the basis of calculated results, the bias voltage dependence of the space charge region near the MS interface and its effects on the currentvoltage (I-V) characteristics of this structure are analyzed.

关 键 词：空间电荷区 电子注入接触 空穴注入接触 驰豫半导体 砷化镓 电传输特性 

分 类 号：TN304.23[电子电信—物理电子学]