钽酸锂晶体滤波器的离子束刻蚀技术研究  

Study on Ion Beam Etching Technique of Lithium Tantalate Crystal Filter

作　　者：张永川[1] 彭胜春[1] 徐阳[1] 

机构地区：[1]中国电子科技集团公司第26研究所,重庆400060

出　　处：《压电与声光》2014年第3期474-475,共2页Piezoelectrics & Acoustooptics

摘　　要：以钽酸锂晶体作为晶体滤波器压电材料。通过优化离子束刻蚀工艺参数,采用间歇式离子束刻蚀方法,解决了刻蚀区微裂纹工艺问题,使厚度为60μm钽酸锂晶片减薄至30μm。利用反台阶结构晶片制作出了中心频率为70MHz、3dB带宽为1 109kHz的高基频宽带钽酸锂晶体滤波器。The lithium tantalite crystal was used as the piezoelectric material for crystal filter. Through optimizing the ion beam etching technique parameters, the micro-crack in the etching area was overcome by using the interval ion beam etching technique, and the thickness of lithium tantalite wafer was thinned from 60 m to 30 m. A high fundamental frequency and wide-band lithium tantalite crystal filter with center frequency of 70 MHz and 3 dB bandwidth of 1 109 kHz was fabricated by using the negative-bench structure.

关 键 词：晶体滤波器 钽酸锂 离子束刻蚀 高频 宽带 

分 类 号：TN713.91[电子电信—电路与系统]