氧等离子体刻蚀CVD金刚石膜的影响机理  

Mechanism of etching CVD diamond film by oxygen plasma

作　　者：潘鑫[1] 马志斌[1] 李国伟[1] 曹为[1] 王传新[1] 付秋明[1] 

机构地区：[1]武汉工程大学材料科学与工程学院,湖北省等离子体化学与新材料重点实验室,武汉430073

出　　处：《强激光与粒子束》2014年第7期243-247,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(10875093)

摘　　要：采用电子回旋共振(ECR)等离子体在不同的磁场位形和工作气压下刻蚀化学气相沉积(CVD)金刚石膜,运用双探针和离子灵敏探针法对等离子体进行了诊断,研究了等离子体参数对刻蚀效果的影响。结果表明:磁场由发散场向收敛场转变时,离子温度、电子温度和等离子体密度都随之增大,刻蚀效果逐渐增强;当工作气压由低气压向高气压变化时,等离子体参数先增大后减小,CVD金刚石膜表面粗糙度降低程度也出现了相同的趋势。Several CVD diamond films were etched using ECR plasma in different magnetic fields and working pressure.Double probe and ion sensitive probe were used to investigate the influence of magnetic field and working pressure on etching effect.Results showed that when the divergence magnetic field was changed to the convergence one,the ion temperature,the electron temperature and the plasma density increased and the etching effect was enhanced.While the working pressure changed from a low pressure to a high pressure,the plasma parameters first increased and then decreased,a drop of the surface roughness was showed as the same trending.

关 键 词：刻蚀 CVD金刚石 等离子体参数 ECR等离子体 

分 类 号：TQ164[化学工程—高温制品工业] O484[理学—固体物理]