氧分压对溅射制备氧化镓薄膜结构及光学带隙的影响  

Effect of oxygen pressure on structure and optical band gap of gallium oxide thin films prepared by sputtering

作　　者：马海林[1] 苏庆[2] 

机构地区：[1]兰州交通大学,国家绿色镀膜技术与装备工程技术研究中心,兰州730070 [2]兰州大学,物理科学与技术学院,兰州730000

出　　处：《物理学报》2014年第11期230-234,共5页Acta Physica Sinica

基　　金：兰州交通大学青年科学基金(批准号:2011037)资助的课题~~

摘　　要：在不同氧分压η(η=O2/[Ar+O2])实验条件下,通过直流反应溅射制备了氧化镓薄膜,然后在真空环境下进行高温再结晶热处理.用紫外-可见分光光度计(UV-Vis)研究了氧分压η对光学带隙Eg的影响.X射线衍射(XRD)和共聚焦拉曼散射光谱(Raman Scattering)分析显示:经900℃高温热处理后,薄膜呈结晶β相氧化镓,且晶粒尺寸随着氧分压的逐渐增加而变大.室温下由UV-Vis测试薄膜透过率并利用Tauc公式计算得到样品的光学带隙Eg在4.68—4.85 eV之间,且随氧分压η的逐渐增加而变大.Gallium oxide （Ga2O3） thin films are deposited on silicon and quartz glass substrates by reactive DC magnetron sputtering under different oxygen pressure η （η =O2/[Ar＋O2]）, and the effect of oxygen pressure on the structure and optical band gap （Eg） is investigated. X-ray diffraction （XRD） and Raman scattering reveal that the products are beta-gallium oxide after heat treatment at 900 ℃, and that the grain size and optical band gap of gallium oxide are increased, the band gap Eg varies from 4.68 to 4.85 eV when tested by a room-temperature ultraviolet-visible （UV-VIS） spectrophotometer, and the （Eg） has also been calculated by using Tauc formula while the oxygen pressure η gradually increases.

关 键 词：氧化镓 光学带隙 磁控溅射 

分 类 号：O484.41[理学—固体物理]