电子从〈100〉和〈111〉晶向硅隧穿超薄快速热氮化SiO_2 膜(英文)  

Electron Tunneling from the 〈100〉 and 〈111〉 Oriented Si into the Ultrathin Rapid Thermal Nitrided SiO_2 Films

作　　者：冯文修[1] 田浦延[1] 陈蒲生[1] 刘剑[1] 

机构地区：[1]华南理工大学应用物理系,广东广州510640

出　　处：《华南理工大学学报（自然科学版）》2001年第3期13-17,共5页Journal of South China University of Technology(Natural Science Edition)

基　　金：广东省自然科学基金资助项目! (95 0 186 )&&

摘　　要：用卤素 -钨灯作辐射热源快速热氮化 (RTN) ,在〈10 0〉和〈111〉晶向Si衬底上制备了Si_SiOxNy_Al电容 ,并测量了由低场到F_N隧穿电场范围的电子从N型Si积累层到超薄SiOxNy 膜的电流传输特性 .测量结果说明 ,两种不同晶向的低场漏电流没有多大区别 ,而在高场范围对〈10 0〉晶向电容结构的F_N隧穿电流要比〈111〉晶向电容结构的F_N隧穿电流显著增加 。The Si_SiO x N y _Al capacitors have been fabricated on both 〈100〉 and 〈111〉oriented Si substrates by the tungsten_halogen lamps thermal RTN. The electron current transporting from the n_type Si accumulation layer into the SiO x N y ultrathin films has been measured in both the lower electric field region and the F_N region. It is shown that in the lower field region the leakage current has no difference between both crystal orientations. In the higher field region, however, the F_N tunneling current is increased more markedly in 〈100〉 oriented capacitor than in 〈111〉 oriented capacitor. The results have been discussed preliminarily in this paper.

关 键 词：电子隧穿 快速热氮化 晶向硅 超薄二氧化硅膜 遂穿电流 电流传输特性 

分 类 号：O484.3[理学—固体物理]