IGBT热疲劳工作对焊料层可靠性的影响  

Thermal Fatigue Effects on IGBT Die Attach Reliability

作　　者：田蕴杰 张小玲[1] 谢雪松[1] 佘烁杰[1] 吕长志[1] 王任卿[2] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124 [2]中国科学院微电子研究所,北京100029

出　　处：《固体电子学研究与进展》2014年第3期288-292,共5页Research & Progress of SSE

摘　　要：IGBT在实际应用中会频繁处于周期性的高低温循环过程,循环过程中反复作用于IGBT器件的热应力极易在焊料层形成空洞,从而导致器件热阻增大甚至热疲劳失效。通过有限元软件ANSYS建立了两种新的分散空洞模型,在工作功率条件下对比5%到50%中心空洞率及10%到20%分散空洞率模型的热分布并进行模拟分析。结果表明,边缘分散空洞对器件温升影响小于均匀分散空洞和中心空洞,但在温度循环中先于后者出现。空洞率为10%时,边缘分散空洞模型最高温升高了1.6K,与phase11和超声波显微镜实测IGBT器件功率循环5 000次后结果基本一致。In practical application, IGBT encaunters thermal cycling frequently, and this kind of repeated thermal stress in IGBT device can easily grow die attach voids, resulting in thermal resistance increase and thermal fatigue failure of the device. In this paper, two novel dispersion void models are established by using the finite element software ANSYS, and simulation analysis is done by comparing the thermal distributions of IGBT devices with five to fifty percentage of central voids and ten to twenty percentage of dispersed voids under practical working power con- dition. Simulation results show that the influence of the edge dispersed voids on device tempera- ture is less than that of uniformly dispersed voids and central voids, but the edge dispersed voids appear earlier than uniformly dispersed voids and central voids. The peak temperature of the de- vice increases by 1.6 K at the same void percentage, which are consistent with values measured by Phase11 and C-SAM aftar 5 000 times of the thermal fatigue cycle.

关 键 词：绝缘栅双极型晶体管 热疲劳 空洞率 空洞位置 

分 类 号：TN322.8[电子电信—物理电子学]