聚酰亚胺柔性基底上磁控溅射金属铜膜的电学性能研究  

Study on electrical performance of metal copper films deposited by magnetron sputtering on polyimide flexible substrates

作　　者：彭琎 陈广琦[1] 宋宜驰 谷坤明[1] 汤皎宁[1] 

机构地区：[1]深圳大学材料学院,深圳市陶瓷先进技术实验室,深圳518060 [2]伦敦帝国理工大学航空工程系

出　　处：《物理学报》2014年第13期395-400,共6页Acta Physica Sinica

基　　金：深圳市科技计划项目(批准号:JC200903130309A);深圳市龙岗区科技创新局产学研合作项目(批准号:cxy2012006)资助的课题~~

摘　　要：为了制备用于挠性电路板中的挠性覆铜板,在聚酰亚胺上使用中频磁控溅射方法制备金属Cu膜.实验中,通过改变制备温度、衬底偏压、制备时间等工艺参数,制备出导电性符合要求的Cu薄膜.用X射线衍射仪(XRD)、扫描电镜(SEM)研究薄膜的成分、结构以及表面形貌,用触针式台阶仪、四探针电阻测量仪测量薄膜的膜厚以及电阻,并计算薄膜的电阻率.最终得到制备导电性符合工业应用标准的Cu膜的最佳工艺条件:制备温度100℃,直流偏压50 V,无脉冲偏压.For preparing flexible copper clad laminate, copper films are deposited by magnetron sputtering on polyimide substrates. During the experiment, the prepared copper films show good conductivity while changing the technological parameter like preparation temperature, substrate bias, preparation time, and so on. The composition, structure, and surface morphology of the thin film are investigated by X-ray diffraction （XRD） and scanning electron microscope （SEM）. The stylus profilometer and four-point probe resistance measuring instrument are used to examine the thickness and resistance of the thin films, and the resistivity of the film is calculated. Finally, the optimum processing conditions for the copper films are obtained according to the standard of industrial application： the preparation temperature is 100℃, the DC substrate bias is 50 V, with no pulsed substrate bias.

关 键 词：挠性覆铜板 金属铜膜 中频磁控溅射 电阻率 

分 类 号：O484[理学—固体物理]