Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes  

作　　者：陈贵楚 范广涵 

机构地区：[1]Department of Electronic Information Zhao Qing University [2]Institute of Optoelectronic Material and Technology South China Normal University

出　　处：《Optoelectronics Letters》2014年第4期250-252,共3页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61176043)

摘　　要：The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. The simulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, which is mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reported experimental results perfectly.The steady and dynamic properties are comparatively simulated results show that the n-doped LED exhibits is mainly attributed to the higher carrier radiative experimental results perfectly. investigated for the n-doped and non-doped InGaN LEDs. The the superior luminescence and modulation performance, which rate of n-doped LED. The results can explain the reported

关 键 词：发光二极管 N型掺杂 动态性能 氮化铟镓 稳态 势垒 INGAN 仿真结果 

分 类 号：TN312.8[电子电信—物理电子学] TM243[一般工业技术—材料科学与工程]