Influence of growth temperature on crystalline quality and Raman property of InAs_(0.6)P_(0.4)/InP  

作　　者：刘霞 曹连振 宋航 蒋红 

机构地区：[1]Department of Physics and Electronic Science, Weifang University [2]State Key Laboratory of Luminescence and Applications Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

出　　处：《Optoelectronics Letters》2014年第4期269-272,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.11174224);the Science and Technology Development Program of Shandong Province(No.2013YD01016);the Higher School Science and Technology Program of Shandong Province(No.J13LJ54)

摘　　要：InAs0.6P0.4 epilayers grown by low-pressure metal organic chemical vapor deposition(LP-MOCVD) on InP(100) substrate are investigated. The influence of growth temperature on crystalline quality of InAs0.6P0.4 epilayer is characterized by scanning electron microscopy(SEM), Hall measurements, photoluminescence(PL) spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the crystalline quality and Raman property of InAs0.6P0.4 epilayers have close relation to the growth temperature. It indicates that 530 °C is the optimum growth temperature to get good quality and properties of InAs0.6P0.4 epilayers.IrlAs0.6P0.4 epilayers grown by low-pressure metal organic chemical vapor deposition （LP-MOCVD） on InP （100） sub- strate are investigated. The influence of growth temperature on crystalline quality of InAs0.6P0.4 epilayer is character- ized by scanning electron microscopy （SEM）, Hall measurements, photoluminescence （PL） spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the crystalline quality and Raman property of InAs0.6P0.4 epilayers have close relation to the growth temperature. It indicates that 530 ℃ is the optimum growth temperature to get good quality and properties of InAs0.6P0.4 epilayers.

关 键 词：最适生长温度 拉曼散射光谱 结晶质量 特性 磷化铟 LP-MOCVD 扫描电子显微镜 化学气相沉积 

分 类 号：TN304.055[电子电信—物理电子学]