高价态差掺杂氧化物透明导电薄膜的研究  

Transparent Conductive Oxide Doped Thin Films with High Valence Difference between Dopant and Ion Substituted

作　　者：孟扬[1] 杨锡良[1] 陈华仙[1] 沈杰[1] 蒋益明[1] 章壮健[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《光电子技术》2001年第1期17-24,共8页Optoelectronic Technology

摘　　要：在实用的透明导电氧化物 (TCO)薄膜中 ,载流子迁移率主要是受电子与掺杂离子之间散射的限制。如果掺杂离子与氧化物中被替代离子的化合价相差较大 ,每个掺杂离子可以提供较多的自由载流子 ,则使用较少的掺杂量就可以获得足够多的自由载流子 ,而且可以获得较高的载流子迁移率和减少薄膜对可见光的吸收 ,是提高 TCO薄膜性能的一条捷径。采用反应蒸发法制备的掺钼氧化铟(In2 O3:Mo,简称 IMO)薄膜中 ,Mo6 +与 In3+的化合价态相差 3,远大于广泛研究和应用的 TCO薄膜材料 In2 O3:Sn、Sn O2 :F和 Zn O:Al中的价态差。IMO薄膜的电阻率可以低至 1.7× 10 - 4 Ω· cm,对 4μm以上波长红外线的反射率和可见光区域的平均透射率 (含 1.2 mm厚玻璃基底 )都高于 80 % ;载流子迁移率高达 80～ 130cm2 V- 1 s- 1 ,远超过其它掺杂 TCO薄膜 ;但是自由载流子浓度只有 2 .5× 10 2 0～ 3.5× 10 2 0 cm- 3。The carrier mobility of practical transparent conductive oxide (TCO) thin film is mainly dominated by ionized impurity scattering. If the valence of the dopant is much more than that of the substituted ion, i.e. one atom of dopant contributes more electrons to the electrical conductivity, thus the film may have enough free carriers, a higher carrier mobility and a lower optical absorptance with a lower impurity. It is a convenient method to improve the properties of TCO films. In In 2O 3:Mo(IMO) thin film prepared by conventional thermal reactive evaporation, the valence difference of 3 between Mo 6+ and In 3+ was much bigger than those in other TCO films such as In 2O 3:Sn, SnO 2:F and ZnO:Al. The electrical resistivity as low as 1.7×10 -4 Ω cm was obtained, while the infrared reflectance above 4 μm and the average total visible light transmittance of the IMO film plus the glass substrate both were over 80%. The carrier mobility of IMO was in the range of 80 cm2V -1s -1 to 130 cm2V -1s -1, which was much higher than that of other TCO.The carrier concentration was in the range of 2.5×10 20 cm -3 to 3.5×10 20 cm -3, it might be developed further more to improve the conductivity of IMO.

关 键 词：透明导电薄膜 掺杂氧化物 掺钼氧化铟 

分 类 号：O484[理学—固体物理]