CMOS亚阈值特性的低频低压微功耗电路的设计与模拟  

The Design and Simulation of Low Frequency Low Voltage Micro Power Subthreshold CMOS Circuits

作　　者：王正宏[1] 凌燮亭[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海200433

出　　处：《电子学报》2001年第3期378-382,共5页Acta Electronica Sinica

摘　　要：工作在亚阈值状态的MOS晶体管具有极小的工作电流和类似于双极型晶体管的指数特性 ,因此适合于实现微功耗的外部线性内部非线性电流型电路 .为了适合于低电源电压的运用 ,本文给出了一种新型的电流型四象限乘法器以及滤波器 ,振荡器等基本单元电路 ,并利用标准 0 6Due to their micro operating current and exponential nature,the subthreshold MOS transistors are suitable to implement current mode micro power externally linear circuits.In this paper,a novel current mode four quadrant multiplier is proposed and the design techniques and considerations on basic modules for low voltage micro power applications,such as filters,oscillators,etc.,are given.To verify the performance,a PLL is designed and simulated as an example with the model of standard 0 6μm 5V CMOS process.

关 键 词：CMOS 晶体管 亚阈值特性 电路设计 电路模拟 微功耗电路 

分 类 号：TN386[电子电信—物理电子学]