LP-MOCVD生长InGaAlP外延层In组分控制的动力学分析  

Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP

作　　者：文尚胜[1] 范广涵[2] 廖常俊[2] 刘颂豪[2] 

机构地区：[1]华南理工大学应用物理系,广州510641 [2]华南师范大学MOCVD实验室,广州510631

出　　处：《量子电子学报》2001年第2期175-178,共4页Chinese Journal of Quantum Electronics

摘　　要：本文分析了低压转盘ＭＯＣＶＤ生长室中气流的流动特征，首次提出了在高温（７００℃左右）下生长ＩｎＧａＡｌＰ外延层时，抑制Ｉｎ组分脱吸附的“动压力模型”．解释了托盘转速和生长压力等生长参数对Ｉｎ组分控制的影响．The dynamical characteristics of the gas flow in Turbo-Disk LP-MOCVD chamber is analysed. The dynamical pressure model of suppressing in desorption during InGaAlP epitaxial layer grown by LP-MOCVD at high growth temperature around 700℃ is presented. The effects of the growth parameters such as the disk speed and the reaction pressure on in composition in InGaAlP epitaxial layers are explained based on our model.

关 键 词：低压有机金属化学气相外延 INGAALP 铟组分 控制 外延层生长 动力学分析 

分 类 号：TN304.054[电子电信—物理电子学]