He^+注入Si(100)缺陷退火效应的慢正电子束研究  

Exploring of defects in He^+ implanted Si(100) by slow positron beam

作　　者：张天昊[1] 翁惠民[1] 范扬眉[1] 杜江峰[1] 周先意[1] 韩荣典[1] 张苗 林成鲁[2] 

机构地区：[1]中国科学技术大学近代物理系,合肥230027 [2]中国科学院上海冶金研究所,上海200050

出　　处：《核技术》2001年第4期253-258,共6页Nuclear Techniques

基　　金：国家自然科学基金 !(19875 0 5 0 );中国科学院院长基金;国家教育部留学回国人员科研资助费资助项目

摘　　要：用慢正电子束探针测量了经剂量为 5× 10 16cm-2 的 140keVHe+ 注入的Si(10 0 )单晶S参数与正电子入射能量的关系 ,得到了注入产生缺陷的分布规律 ,发现近表面区域损伤不大 ,缺陷主要是直径小于 1nm的空位或空位团 ,较深的射程末端区域损伤严重 ,缺陷主要是微空洞和微气泡。对退火效应的研究表明 ,低温下退火空位缺陷得到了很好的消除 ,而高温下退火微空洞和微气泡发生融合 。Si(100) crystal implanted by 5×10 16 cm -2 , 140keV He + was probed by slow positron beam, and defect distribution along depth was obtained from the relation between S parameter and positron incidence energy. The near surface region of implanted sample was only slightly damaged. Small vacancies and vacancy clusters less than 1nm in diameter were the dominant defects, while the deeper region around the He + projected range was heavily damaged and had dense larger helium microbubbles and microvoids. Thermal anneal study at different temperatures showed that low temperature annealing could remove most vacancy-type defects effectively. However, annealing at high temperature enlarged the diameters of microbubbles and microvoids.

关 键 词：氦离子注入 硅 缺陷 S参数 半导体 掺杂工艺 退火效应 无损检测 慢正电子束 

分 类 号：TN304.12[电子电信—物理电子学] O474[理学—半导体物理]