用掺氧多晶硅钝化技术制造高可靠高压晶体管  

Highly reliable high voltage transistors by use of the SIPOS passivation technology

作　　者：王军 杨晓智 

机构地区：[1]深圳深爱半导体公司,广东深圳518000

出　　处：《半导体情报》2001年第2期40-42,共3页Semiconductor Information

摘　　要：论述了 SIPOS钝化的原理、生产 SIPOS晶体管的工艺步骤 。The fundamental principle of SIPOS passivation,and the fabrication process of SIPOS transistors are introduced in this paper.The methods of solving the problem of production SIPOS transistors are also discussed.

关 键 词：SIPOS 掺氧多晶硅 平面高压技术 高压晶体管 

分 类 号：TN320.52[电子电信—物理电子学]