多孔硅的电致发光研究  

Study on Visible Electroluminescence from Porous Silicon

作　　者：张甫龙[1] 郝平海[1] 史刚 侯晓远[1] 丁训民[1] 黄大鸣[1] 王迅[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《Journal of Semiconductors》1993年第3期139-142,共4页半导体学报（英文版）

基　　金：863青年基金

摘　　要：本文研究了多孔硅的电致发光现象。在多孔硅上淀积了半透明金膜后,当正向偏压加到15V、电流密度100mA/cm^2时,观察到了稳定的电致可见光发射现象。伏安曲线的测量表明它有明显的类似二极管的整流特性。The visible electroluminescence (EL) from porous silicon has been investigated. The ELcell was made by depositing a semitransparent gold film on the porous silicon layer. Whenthe forward current reached 100mA/cm^2 with he applied voltage of 15V, stable visible light(red) was observed. The I-V curve of this cell showed a rectifying junction behaviour.

关 键 词：硅 多孔硅 电致发光 

分 类 号：TN304.12[电子电信—物理电子学]