p型GaP与Pd/Zn/Pd欧姆接触的冶金性质及界面特性  

Metallurgical Properties of Pd/Zn/Pd Ohmic Contacts to p-type GaP and It's Interface Characteristics

作　　者：张福甲[1] 彭军[1] 

机构地区：[1]兰州大学物理系,兰州730000

出　　处：《Journal of Semiconductors》1993年第3期154-159,共6页半导体学报（英文版）

基　　金：甘肃省自然科学基金

摘　　要：用扫描电镜、X射线衍射谱、能量色散谱及Ar^+离子溅射刻蚀的各元素的俄歇剖面分布,对Pd为基底的P型GaP的欧姆接触层的性质进行了研究。从而揭示了这种金属──半导体接触层形成良好欧姆电极的表面形貌、相变反应、界面状态及各冶金成份在界面层中的变化规律。The metallurgical properties and it's interface characteristics of ohmic contacts for Pdbasedsystems to p-type GaP have been inverstigated by SEM, XRD, EDAS, and AES profiles. It reveals the condition formed ohmic contacts with low contact resistances, it's surfacemorphology, the reaction of phase changes and the changing regularity of metallurgical componentsof interface between GaP and the Pd/Zn/Pd.

关 键 词：化合物半导体 GAP 欧姆接触 冶金 

分 类 号：TN305.93[电子电信—物理电子学]