碱金属Rb在InP（100）表面的催化氧化作用  

Promoted Oxidation of Rb on InP(100) Surface

作　　者：徐彭寿[1] 徐世红 朱警生 刘先明 麻茂生 张裕恒 许振嘉[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室和结构分析开放实验室,中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1995年第4期296-302,共7页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：我们用ＸＰＳ和ＵＰＳ研究了氧在Ｒｂ复盖的和清洁的ＩｎＰ（１００）表面的吸附行为．实验结果表明，碱金属可以使衬底的氧化能力大大增加．在氧的暴露量低于１Ｌ时，氧主要吸附在碱金属原子之间的ＩｎＰ衬底上，且位于Ｒｂ原子层之下．当氧暴露量增加时，氧主要还是吸附在Ｒｂ覆盖层下面，这时衬底开始氧化．在清洁表面，氧主要吸附在Ｉｎ原子上．样品退火后，Ｒｂ部分脱附，同时，衬底的氧化物相（ＩｎＰＯ４）含量增加．Abstract The absorptive behavior of oxygen on Rb-covered and clean InP(100) surface is investigated by using XPS and UPS. The experimental results show that the drastic enhancement of the oxidation of substrate has been observed. The oxygen adsorbed on the surface of Rb-covered InP (100) Substrate can be oxidated. The oxygen absorbed on clean InP(100) may be located under the Rb overlayer. With increasing the exposure of oxygen, the InP(100) surface may be located on in atoms. When the substrate covered by Rb is annealed, a part of Rb may desorb from the substrate and the oxidated phase corresponding to InPO4 increases in intensity.

关 键 词：磷化铟 铷 催化氧化 碱金属 半导体表面 

分 类 号：TN304.23[电子电信—物理电子学] O472.1[理学—半导体物理]