高精度双晶衍射（HRDCD）方法检测InGaAs／GaAs超薄应变层量子阱结构参数  

InGaAs/GaAs Ultrathin Strained Quantum Well Characterization by High Resolution X-ray Diffraction

作　　者：王小军[1] 庄岩[1] 王玉田[1] 庄婉如[1] 王启明[1] 黄美纯 

机构地区：[1]厦门大学物理系,国家光电子工艺中心,中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1995年第3期170-176,共7页半导体学报（英文版）

摘　　要：应变超薄层结构的组分、厚度、应变状态的直接检测，对于器件应用具有重要的意义，本文中，利用ＭＯＣＶＤ方法得到高质量的ＩｎＧａＡｓ／ＧａＡｓ量子阱材料，采用双晶衍射方法的弱信号收集技术，结合运动学理论模拟，得出同时包含几个不同阱宽的ＩｎＧａＡｓ／ＧａＡｓ量子阶结构的重要参数，其检测结果与光致发光（ＰＬ）、透射电子显微镜（ＴＥＭ）等方法的测试结果基本一致，表明Ｘ射线双晶衍射方法是检测超薄层应变量子阱结构的一个有效方法．Abstract InGaAs/GaAs ultrathin strained single quantum well grown by Metalorganic Chemical Vapour Deposition (MOCVD) technique with well thickness ranging from 40A to 200A. In content 0.08<x<0.10, separator GaAs layer of about 400A or 1000A, has been characterized by the X-ray double crystal diffraction (HRDCD) technique in a conventional (004) Cu Ka symmetrical reflection geometry. Based on kinetic theory, a careful simulation of the diffraction profiles allow an accurate determination of the in content and the thickness of both InGaAs and GaAs layer. Detail analysis shows that with rocking curve simulated using kinetic theory, HRDCD technique is a good method to characterize the structural parameters of ultrathin strained quantum well.

关 键 词：砷化镓铟 砷化镓 量子阱结构 参数 HRDCD法 检测 

分 类 号：TN304.23[电子电信—物理电子学]