亚半微米光刻技术的新动向  

New Development for Sub-0.5μm Lithography

作　　者：钱小工[1] 

机构地区：[1]机电部第13研究所,石家庄050051

出　　处：《半导体情报》1993年第1期49-57,共9页Semiconductor Information

摘　　要：最近几年中提出了几种用于光学光刻的新方法,包括移相掩模技术、斜向照明、环形照明、FLEX和Super-FLEX等,这些方法提高了光学投影光刻的分辨率,并改善了一定特征尺寸下的焦深,期望它们可以将现有的i线步进机的用途扩展到制造最小特征尺寸为0.3μm的半导体器件。本文介绍了这些方法的基本原理、效果和应用状况,并讨论了实用中的关键问题。Numbers of new methods for photolithography have been proposed in recent years, including phase-shifting mask technology, oblique illumination, annular illumination, FLEX and super-FLEX. They improve the resolution of optical projection lithography as well as the depth of focus for a given feature and are expected to extend the use of current i-line steppers to fabrication of semiconductor devices with a minimum feature size of about 0.3μm. The basic principle, results, and application are introduced and the key problems for practice are discussed.

关 键 词：光刻 工艺 半导体器件 

分 类 号：TN305.7[电子电信—物理电子学]