离子束蚀刻硅片沟槽台阶形貌——凹沟现象的研究  

The Step Topography of the Grooves on Silicon Wafer Etched by Iron Beam—Study of the Dig-out

作　　者：张建民[1] 傅新定[2] 

机构地区：[1]陕西师范大学物理系 [2]中国科学院上海冶金研究所

出　　处：《表面技术》1989年第5期43-46,共4页Surface Technology

摘　　要：本文用能量为600eV、束流密度为0.5mA·cm^(-2)垂直入射的氩离子束对半导体单晶硅上不同宽度的沟槽(15μm、10μm、5μm)进行了不同时间的离子束蚀刻,发现在槽底靠近槽壁处出现了凹沟现象,建立了入射离子在斜壁上反射的理论模型,并通过计算机模拟和实验结果进行了比较。In this paper,the energy of 600ev Artions with a current density of 0.5ma/cm^2at normal incidence is used to etch various width grooves(15μm,10μm,5μm)on the semi-conductor single crystal silicon wafer.It is observed that the dig-out is presented on the floor of grooves near the walls.A theoretical model of the reflectlon of incident ion beam from adjacent steep wall is constructed.The experimental results are compared with computer simulation.

关 键 词：单晶硅片 半导体 沟槽 离子束刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]