非晶SiO_xN_y薄膜的红外吸收光谱研究  

Investigation of a-SiO_xN_y Thin Film by Infrared Absorption

作　　者：石旺舟[1] 欧阳艳东[1] 俞波[1] 

机构地区：[1]汕头大学物理系,汕头515063

出　　处：《光谱学与光谱分析》2001年第2期187-189,共3页Spectroscopy and Spectral Analysis

基　　金：广东省重点科技项目! (2KB0 0 80 5G)资助课题

摘　　要：通过改变O和N含量研究了SiOxNy 薄膜中从 6 0 0到 16 0 0cm- 1 范围内的红外吸收谱特征。结果表明 ,起源于单一Si—O、Si—N键的吸收峰在 110 5和 86 5cm- 1 处 ;而随着薄膜中O或N含量的升高 ,位于单一键吸收峰的两侧出现因O—Si—O、N—Si—N的对称和反对称键吸收的左右肩 ;对O—Si—N ,其特征吸收峰位于 10 36和 85 6cm- 1 处。Infrared absorptive characteristics of a-SiOxNy thin film was investigated by altering O and N content. Various molecular bonds were identified by the infrared absorption measurement. 1 105 and 865 cm(-1) peaks are associated with single Si-O and Si-N modes respectively. When the O and N contents increase, the peaks associated with the symmetry and anti-symmetry modes of O-Si-O and N-Si-N are measured. For N-Si-O, the aborptive peaks of Si-O and Si-N mode are located at 1 036 and 890 cm(-1) respectively.

关 键 词：硅基薄膜 晶格振动 红外吸收光谱 氮 氧 掺杂 制备 PECVD 

分 类 号：O484.41[理学—固体物理] TB43[理学—物理]