纳米晶粒Ag-TCNQ络合物薄膜的制备及电双稳特性  

Nanometer Particles Organometallic Copmlex Ag TCNQ: Preparation and Electrical Bistable Characteristics

作　　者：叶钢锋[1] 严学俭[1] 潘钢[1] 张群[1] 章壮健[1] 华中一[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术》2001年第2期91-94,98,共5页Vacuum Science and Technology

基　　金：国家自然科学基金青年基金资助项目! (5 970 2 0 0 5 )

摘　　要：以物理气相沉积方法将TCNQ和Ag制备的金属有机络合物薄膜 ,在一定的工艺条件下可做到构成薄膜的晶粒直径为 40nm左右 ,粗糙度也为纳米量级。同时在大气及室温条件下 ,在STM电场的作用下薄膜可从高阻态转换为低阻态 ,作用点的直径约为 70nm。Organometallic complex Ag TCNQ thin film was prepared by physical vapor deposition and low temperature annea ling.The film was studied with an air scanning tunneling microscopy.The grain sizes of the film was estimated to be less than 40 nm with a roughness of a few nanometers.The electric field of the SPM tip can significantly change the impedance of the film ,from a high impedance state to a low impedance state.The low impedance area involved was evaluated to be 70 nm in diameter.

关 键 词：金属-有机络合物 银 TCNQ 纳米晶粒 薄膜 电双稳特性 制备 物理气相沉积 

分 类 号：TB43[一般工业技术] O484.4[理学—固体物理]