热丝法化学气相沉积金刚石膜  

DEPOSITION DIAMOND FILM BY HFCVD

作　　者：曹小明[1] 张军旗[1] 黄荣芳[1] 闻立时[1] 

机构地区：[1]中国科学院金属研究所,沈阳市110015

出　　处：《材料研究学报》2000年第B01期81-83,共3页Chinese Journal of Materials Research

摘　　要：用热丝法沉积金刚石膜，分离送入氢气和甲烷，可以减少钨丝碳化，提高功率利用率分送与混进相结合，可以制备晶体形态良好的金刚石膜到达基材表面的活性粒子的数量是提高金刚石膜生长速率的关键生长速率可达 ３．８μｍ／ｈ，均匀区面积达In the research of deposition diamond film by HFCVD, the method of inlet CH4 and Hi separate could reduce the carbonation of tungsten filament and raise the efficiency of using power. The combination of mixed and separate inlet of CH4 and HZ can get well-faced crystal of diamond. The crux of increasing the growth rate of diamond film is to increase the quantity of active species to the substrate surface per unit area. The growth rate of 3.8μm/h and even area of 400mm2 were obtained.

关 键 词：热丝法 金刚石膜 化学气相沉积 制备 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]