MCT液相外延薄膜的生长和特性  

Growth and Property of Hg_(1-x) Cd_x Te LPE Films

作　　者：王跃[1] 汤志杰[1] 庄维莎[1] 何景福[1] 

机构地区：[1]昆明物理研究所

出　　处：《红外技术》1991年第1期6-10,共5页Infrared Technology

摘　　要：用开管水平液相外延系统从富Te溶剂中生长了不同x值的MCT薄膜。经X射线衍射、Hall电学参数、红外光谱、扫描电镜、X射线能谱仪和电子通道花样分析测试,结果表明:外延薄膜表面平整,光学参数较好,纵向、横向组份均匀,晶体结构完整,电学参数较好,外延膜质量优良。短波材料(n型):载流子浓度3.54×10^(14)cm^(-3),迁移率1.63×10~4cm^2V^(-1)s^(-1);中波材料(n型):载流子浓度9.95×10^(14)cm^(-3),迁移率为1.76×10~4cm^2V^(-1)s^(-1);原生长波材料(n型):载流子浓度为2.15×10^(15)cm^(-3),迁移率2.00×10~4cm^2V^(-1)s^(-1)。The growth of Epitaxial films of Mercury Cadmium Tellurid(MCT) with various x values from Te-rich solution in an open tube sliding system is studied. LPE films of MCT have been grown on CdTe substrates and their high quality has been confirmed by Infrared transmission, X-ray Diffraction, Hall and composition measurements. Typically the FWHM value is 158 arc. second, the hole concentration 3.15×10^(16)cm^(-3), the Hall mobility 1532.6cm^2 V^(-1) s^(-1) for x=0.315 MCT film; the electron concentration 2.15×10^(15)cm^(-3), the Hall Mobiliiy 20024.1cm^2 V^(-1) s^(-1) for x=0.200 as-grown MCT film.

关 键 词：液相外延 薄膜生长 碲镉汞 MTC膜 

分 类 号：TN304.055[电子电信—物理电子学]