开管汽相外延法生长碲镉汞晶膜  

The Crowth of MCT Crystal Film by Open-Tube Vapor Phase Epitaxy

作　　者：吴长树[1] 张光华[1] 宋炳文[1] 张景韶[1] 

机构地区：[1]昆明物理研究所

出　　处：《红外技术》1991年第6期15-17,共3页Infrared Technology

摘　　要：报道用开管汽相外延法生长长波碲镉汞晶膜的结果。实验表明,用这种方法容易得到适合红外焦平面列阵器件制备用的大面积均匀优质碲镉汞晶膜。The Growth of long IR wave length MCT crystal film by open-tube vapor phase epitaxy is report in this paper,The result showed that this method was convenient to prepare Jarge-area,uniform at high quality MCT crystal films needed for the fabrication of IRFPA devices.

关 键 词：汽相外延 外延生长 碲镉汞晶膜 

分 类 号：TN304.054[电子电信—物理电子学]