SiC_xN_y:H薄膜的FTIR研究  

FTIR STUDIES OF SiC_xN_y: H THIN FILMS

作　　者：郭慧[1] 张伟[1] 朱景兵 苏诚培 邬建根[1] 王季陶 屈逢源 

机构地区：[1]复旦大学物理系,上海200433

出　　处：《红外与毫米波学报》1991年第4期253-258,共6页Journal of Infrared and Millimeter Waves

基　　金：红外物理国家重点实验室部分资助课题

摘　　要：用低温PECVD方法制备出成分连续可交的SiC_xN_y:H薄膜,用FTIR和AES方法分析了薄膜的组分。实验表明FTIR吸收谱可以快速地估计SiC_xN_y:H薄膜中N/N+C的比例,快速灯光退火薄膜的FTIR分析表明用PECVD制作的SiC_xN_y:H薄膜用做硅器件钝化膜具有较好的热稳定性。SiC_xN_y: H thin films with continuously variable compositions have been preparedby using the plasma-enhanced chemical vapor-deposition (PECVD) method. The composition of the films is analyzed by using FTIR and AES. The experimental results show that the ratio of N/(N+C)in the SiC_xN_y: H films can be obtained rapidly from the FTIR absorption spectrum. Analyses of films thermally annealed rapidly by using FTIR indicate that the passivated films, which have been prepared by PECVD, have good thermal stabilities.

关 键 词：SiCxNy:H 薄膜 FTIR PECVD 

分 类 号：O484[理学—固体物理]