含氮直拉硅中复合浅施主的光热电离光谱研究  

PHOTOTHERMAL IONIZATION SPECTRA OF SHALLOW COMPLEX DONORS IN Cz-Si DOPED WITH NITROGEN

作　　者：胡灿明[1] 黄叶肖[1] 叶红娟[1] 沈学础[1] 祁明维 邬建根[3] 李晓雷[3] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家实验室,上海200083 [2]中国科学院上海冶金研究所,上海200050 [3]复旦大学物理系,上海200433

出　　处：《红外与毫米波学报》1991年第5期327-331,共5页Journal of Infrared and Millimeter Waves

摘　　要：报道N型含氮直拉硅单晶的光热电离光谱(PTIS)除观察到P的谱线系列外,还观察到三个与氮、氧有关的复合型浅施主中心D(N-O)的谱线系,首次报道了它们3p_±以上的谱线位置,并精确测定了其电离能为36.16meV、36.41meV和37.37meV。变温分析表明,它们不是源于同一化学中心的基态分裂,而是独立的复合施主中心。Photothermal ionization spectra of N-type Cz-Si doped with nitrogen are reported. Three novel series of spectral lines attributed to the shallow donors of nitroge oxygen complexes D(N-O)s are found in addition to the line series of phosphorus. Spectral lines associated with excited states higher than 3p_± of D (N-O)s have been observed for the first time and the ionization energies of D(N-O)s are accuratel determined as 36.16 meV, 36.41meV and 37.37 meV. The analysis at different temperatures shows that the D(N-O) lines are not from the different ground state of the same chemical center.

关 键 词：直拉硅 复合浅施主 光热电离谱 硅 

分 类 号：TN304.12[电子电信—物理电子学]