6H-SiC高反压台面pn结二极管  

Electrical Characterization of 6H-SiC pn Diodes

作　　者：王姝睿[1] 刘忠立[1] 李晋闽[1] 王良臣[1] 徐萍[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2001年第4期507-510,共4页半导体学报（英文版）

摘　　要：在可商业获得的单晶 6 H- Si C晶片上 ,通过化学气相淀积 ,进行同质外延生长 ;并在此 6 H - Si C结构材料上 ,利用反应离子刻蚀和接触合金化技术 ,制作台面 pn结二极管 .详细测量并分析了器件的电学特性 ,测量结果表明此 6 H - Si C二极管在室温、空气介质中 ,- 10 V时 ,漏电流密度为 2 .4× 10 - 8A/cm2 ,在反向电压低于 6 0 0 V及接近30 0℃高温下都具有良好的整流特性 .The fabrication and the electrical characterization of p +n junction diodes on 6H-SiC are reported,using the reactive ion etching and electrical contact metallization techniques.The mesa structured p+n junction diodes are fabricated in 6H-SiC epilayers grown by chemical vapor deposition on commercially available single-crystal 6H-SiC wafers, which are tested in the air and show a small reverse leakage current of 2 4×10 -8 A/cm 2 at the bias voltage of -10V and the high breakdown voltage of 600V at room temperature.Good rectification characteristic is shown at a high temperature of 550K.[KH3/4D]

关 键 词：碳化硅 PN结二极管 6H-SIC 

分 类 号：TN31[电子电信—物理电子学]