提高光刻图形质量的双曝光技术  

Double-Exposure Technique to Improve Lithography Quality

作　　者：苏平[1] 冯伯儒[1] 张锦[1] 

机构地区：[1]中国科学院光电技术研究所微细加工光学技术国家重点实验室,成都610209

出　　处：《微细加工技术》2001年第2期20-23,共4页Microfabrication Technology

基　　金：国家自然科学基金! (6 0 0 76 0 19) ;所长基金!(JK9910 );微细加工光学技术国家重点实验室基金!(KFS990 9)

摘　　要：双曝光技术能提高图形对比度和分辨率 ,可改善焦深 ,从而提高光刻图形质量。介绍了双曝光技术原理和几种双曝光方法 ,同时 ,提出采用双曝光技术 ,结合相移掩模和光学邻近效应校正来提高光刻分辨率 ,给出了双曝光光刻方法的实例及计算机模拟结果。The double-exposure technique,which is used for optical lithography,has the advatages to enhance the contrast and the resolution,to improve the depth of focus and finally to improve the lithography quality. The principle and several double-exposure techniques are introduced,the double-exposure technique with the phase-shifting mask and the optical proximity correction are used for the enhancement of the lithography resolution.An example of double-exposure techniques and its computer simulat ed results are presented.

关 键 词：光学光刻 双曝光技术 图形质量 

分 类 号：TN305.7[电子电信—物理电子学]