Au/PZT/p-Si结构铁电存储二极管的制备及其性能  

Fabrication and Characteristics of Au/PZT/p-Si Ferroelectric Memory Diode

作　　者：王华[1] 于军[1] 董晓敏 周文利[1] 王耘波[1] 谢基凡[1] 

机构地区：[1]华中理工大学电子科学与技术系

出　　处：《Journal of Semiconductors》2001年第5期641-645,共5页半导体学报（英文版）

基　　金：国家自然科学基金! (批准号 :697710 2 4);湖北省自然科学基金! (批准号 :98J0 3 6)&&

摘　　要：采用准分子脉冲激光沉积 (PL D)工艺 ,制备了 Au/ PZT/ p- Si结构铁电存储二极管 .在氧气氛 35 0℃低温沉积、原位 5 30℃快速退火工艺条件下 ,获得了多晶纯钙钛矿结构的 Pb (Zr0 .5 2 Ti0 .48) O3(PZT)铁电薄膜 . PZT薄膜的铁电性能测试显示较饱和的、不对称的电滞回线 ,其剩余极化和矫顽场分别为 13μC/ cm2和 48k V/ cm.从C- V和 I- V特性曲线观察到源于铁电极化的回滞现象 ,记忆窗口约 1.1V,+4 V偏压下电流密度为 3.9× 10 - 6 A/cm2 .A ferroelectric memory diode that consists of Au/Pb(Zr_ 052Ti_ 048)O_3/p-Si structure has been fabricated by using pulsed laser deposition (PLD) technique.In the oxygen ambient of 133Pa partial pressure,the PZT film is deposited on p-Si(100) at the temperature of 350℃,then annealed at 530℃ for 10min.The PZT film with the thickness of 400nm shows a saturated and asymmetric P-E hysteresis loop,and its remnant polarization and coercive field are 13 μC/cm2 and 48kV/cm,respectively.The leakage current of the fabricated diode is 39×10 -6 A/cm2 at the bias voltage of +4V.Both the C-V and I-V characteristics of the ferroelectric diode have hysteresis loops due to the ferroelectric remnant polarization,which indicates that the access function has been realized in the ferroelectric memory diode.

关 键 词：脉冲激光沉积 铁电薄膜 铁电存储二极管 锆钛酸铅 

分 类 号：TN312[电子电信—物理电子学]