高纯硅中新的浅施主中心  

NOVEL SHALLOW DONOR CENTERS IN HIGH-PURITY SILICON

作　　者：俞志毅[1] 黄叶肖[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理开放研究实验室,上海200083

出　　处：《红外研究》1990年第1期67-72,共6页

摘　　要：报道了N型高纯区熔硅单晶的高分辨率光热电离光谱(PTIS),观察到2个新的谱线系列。结果表明新的谱线系列可能与2个“类氢”复合型浅施主中心(NSD)有关,其浓度低达～10~9cm^(-3),电离能分别为36.61meV和36.97meV。另外,对P和NSD(1)都观察到以前未能分辨的与6p±以上杂质激发态有关的谱线,分析表明,NSD可能是晶体生长过程中产生的,氧可能在其中起重要作用。High-resolution photothermal ionization spectra of N-type high-purity silicon single crystal grown by float-zone melting method are repolled. Two novel series of spectral lines (NSDs) have been revealed for the first time. It has been shown that they might be due to two 'hydrogenic' complex donor centers with concentrations of about 10~9cm^(-3), and with ionization energies of 36.61meV and 36.97meV, respectively. Furthermore, a few previously unresolved spectral lines associated with excited impurity states higher than 6p± of phosphorus and NSD(1) have also been observed. It is suggested that these novel shallow donor centers are probably be in troduced during crystal growth, in which oxygen might play an important role.

关 键 词：高纯硅 剩余浅施主 复合型杂质中心 光热电离光谱 半导体 

分 类 号：O474[理学—半导体物理] TN304.12[理学—物理]