GaAs/AlGaAs非对称耦合双量子阱界面混合效应光荧光谱研究  

STUDY ON THE INTERMIXING OF GaAs/AlGaAs ASYMMETRICAL COUPLING DOUBLE QUANTUM WELL WITH PHOTOLUMINESCENCE SPECTRA'

作　　者：缪中林[1] 陆卫[1] 陈平平[1] 李志锋[1] 刘平[1] 袁先漳[1] 蔡炜颖[1] 徐文兰[1] 沈学础[1] 陈昌明[2] 朱德彰[2] 胡均[2] 李明乾[2] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室 [2]中国科学院上海原子核研究所核分析技术开放实验室,上海201800

出　　处：《红外与毫米波学报》2001年第1期15-19,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金! (编号 6 96 76 0 14 );国家重点基础研究基金资助项目&&

摘　　要：用分子束外延系统生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合注入的方法 ,在同一块衬底上获得了不同注入离子和不同注入剂量的耦合量子阱单元 ,没有经过快速热退火过程 ,在常温下测量了不同单元的显微光荧光谱 ,发现子带间跃迁能量最大变化范围接近 10 0 me V。GaAs/AlGaAs asymmetrical coupling double quantum wells (ACDQW) were grown with MBE with the combinative implantation method, and several areas of coupling quantum well with different implantation ion of As + and H + and different ion doses in single wafer were obtained. Without rapid thermal annealing procedure, maximum difference of transition energy of intersubbands of 100meV was found from the photoluminescence spectra measured at room temperature. During the implantation process, the energy shift caused by combinative implanation was found to be larger than that caused by ion implantation individually.

关 键 词：非对称耦合双量子阱 组合注入 界面混合 光荧光谱 子带间跃迁能量移动 GAAS ALGAAS 

分 类 号：TN304.23[电子电信—物理电子学] TN213