Ga As/Al Ga As多量子阱结构中的电子干涉  

Interference of Electron in GaAs/AlGaAs Multiquantum Well Structure

作　　者：程兴奎[1] 黄柏标[2] 徐现刚[2] 任红文[2] 刘士文[2] 蒋民华[2] 

机构地区：[1]山东大学光电材料与器件研究所,济南250100 [2]山东大学晶体材料所,济南250100

出　　处：《电子学报》2001年第5期692-694,共3页Acta Electronica Sinica

基　　金：国家自然科学基金! (No .699760 1 6) ;山东省自然科学基金! (No.Y98G1 1 1 0 7)

摘　　要：由电子波干涉的观点出发 ,理论分析指出 :多量子阱结构势垒以上的电子存在一些分立的弱干涉非定域态 .通过红外光激发 ,量子阱中基态电子可以跃迁到这些态上形成一些吸收峰 .理论计算出的吸收峰位置与实验测量到的结果相当一致 ,并且理论估计的吸收峰强弱也与实验结果一致 .On the basis of theory of electron interference,it is pointed out that there are a series of separate weak interference non localized state above barrier for multiquantum well (MQW) structure.When photoexcitation occurs,the electrons on ground state in quantum well can be excited to the weak interference non locaized state above barrier forming absorption peak.The calculated positions of absorption peak are in good agreement with experimental results and estimated strength of several absorption peaks is in agreement with experimental results.

关 键 词：多量子阱 电子干涉 砷化镓 ALGAAS 

分 类 号：TN304.23[电子电信—物理电子学] TN304.26