高浓度Mg掺杂GaN的电学和退火特性研究  

Electrical Property and Annealing Characteristics of Heavy Mg-doped GaN Films

作　　者：童玉珍[1] 李非[1] 杨志坚[1] 张国义[1] 

机构地区：[1]北京大学物理系人工微结构和介观物理国家重点实验室,北京100871

出　　处：《半导体光电》2001年第2期140-143,共4页Semiconductor Optoelectronics

基　　金：国家 8 6 3高技术发展计划项目!(86 3 - 30 7- 12 -3(0 1) );国家自然科学基金资助项目!(6 97896 0 1;6 9876 0 0 2 )

摘　　要：对高浓度Mg掺杂GaN在常规热退火和快速热退火前后的材料质量和电学特性进行了研究。X 射线衍射测量表明 ,重掺杂导致了GaN质量的下降 ,退火后略有恢复。霍尔测量表明 ,Cp2 Mg :TMGa的流量比小于 1:2 6.3时 ,退火后空穴浓度可达到 2× 10 18cm- 3;当Cp2 Mg :TM Ga的流量比为 1:2 1.9时 ,得到的高阻GaN在常规热退火和快速热退火后均只为弱 p型 ,存在明显的施主补偿现象。这被认为是重掺杂导致晶格缺陷增多 ,引入了施主能级 。Quality and electrical characteristics of heavy Mg doped GaN films before and after annealing are studied by Hall and X ray diffraction measurement.Comparing to undoped GaN, the FWHM of X ray rocking curves for heavy Mg doped GaN films increases from 0.1° to 0.304°, while slightly decreases after annealing. It is demonstrated that the quality of GaN films degenerates due to the heavy Mg doping. When the ratio of Cp 2Mg:TMGa flow rate is 1:21.9, the heavy Mg doped GaN has high resistivity and appears to be slight p type after conventional annealing and rapid temperature annealing (RTA).There is obvious compensation for Mg doping in such heavy Mg doped GaN films. The compensation seems to be coming from donor defects caused by heavy Mg doping.

关 键 词：镁Mg掺杂 热退火 氮化镓 电学特性 退火特性 

分 类 号：TN304.23[电子电信—物理电子学]