甲硅烷常压CVD淀积非晶硅研究  

On the Preparation of a-Si Deposited by APCVD from Silane

作　　者：王敬义[1] 何笑明[1] 王宇[1] 王永兴[2] 

机构地区：[1]华中理工大学固体电子学系 [2]武汉工业大学

出　　处：《华中理工大学学报》1991年第2期107-112,共6页Journal of Huazhong University of Science and Technology

基　　金：国家自然科学基金资助项目

摘　　要：本文讨论了以甲硅烷为源,用常压CVD法(APCVD)制备非晶硅的设备改进及工艺优化,提供了一些实验结果.文中着重分析了CVD过程,讨论了在较低温度下获得高淀积速率的原因.Amorphous silicon films were prepared by chemical vapor deposition from mixtures of silane and hydrogen at a total pressure of 1 atm., and at a substrate temperature between 420℃ and 520℃. The growth rate of high quality films is about o.3nm/s at substrate temperature of 430℃ which is much lower than those reported elsewhere with the same technique. The reason why a lower temperature is possible can be explained by the mech-anism of CVD process under lower vertical temperature gradients in the reaction chamber and lower source gas velocity above the substrate. Improvement in equipment and technology for the preparation of a-Si deposited by APCVD are discussed and some experimental results are given. Stress is laid on the analysis of the CVD process and thermal diffusion.

关 键 词：非晶硅 甲硅烷 APCVD 淀积 热扩散 

分 类 号：TN304.8[电子电信—物理电子学]