全离子注入锗光电晶体管的研制  

A FULLY ION IMPLANTED GERMANIUM PHOTOTRANSISTOR

作　　者：杜树成[1] 于理科[1] 姬成周[1] 李国辉[1] 

机构地区：[1]北京师范大学低能核物理研究所,北京100875

出　　处：《北京师范大学学报（自然科学版）》2001年第3期356-358,共3页Journal of Beijing Normal University(Natural Science)

基　　金：国家自然科学基金资助项目 (6 96 76 0 30 ) ;北京市自然科学基金 (496 2 0 0 4) (4992 0 0 4)资助项目

摘　　要：采用锗材料研制出了工作在 1.55μm波长的全离子注入光电晶体管 .选用 (12 0 keV ,2 .5× 10 12 cm- 2 ) +(2 6 0keV ,5× 10 12 cm- 2 )的硼注入和 16 0keV ,5× 10 14 cm- 2 磷注入 ,6 50℃ 15s快速退火 ;采用聚酰亚胺作为钝化膜以及台面结构 .NPNGe光电三极管的hFE=4 0～ 180 .在波长为 1.55μm、功率为 0 .7μW的光照下得到了 4 0 A·W-In order to manufacture germanium phototransistors used in optical fiber communications, transistor structure, passivation layer and the parameters of Rapid Thermal Annealing are studied. Germanium phototransistors are manufactured by ion implantation. Emission region is made by 160 keV, 5×10 14 cm -2 phosphorous ion implantation. Base region is made by (120 keV, 2.5×10 12 cm -2 )+(260 keV , 5×10 12 cm -2 ) boron ion implantation. 〈111〉 oriented 1 Ωcm n type germanium substrate is used as collector. The direct current gain of the transistors ranges from 40 to 180. Leakage current at V c=5 V is 20～70 μA. The responsibility of 4×10 A·W -1 is obtained at 0.7 μW, 1.55 μm light irradiation.

关 键 词：锗 光电探测器 离子注入 光电晶体管 半导体材料 锗工极管 锗晶体管 

分 类 号：TN325.1[电子电信—物理电子学] TN305.3