Cl_2分子束与InP表面反应研究  

Mass Distribution of the Products for the Cl_2 Molecular Beam and InP(100) Surface Reaction

作　　者：金忠 李思义[1] 李雨林[1] 余敏[1] 秦启宗[1] 

机构地区：[1]复旦大学激光化学研究室

出　　处：《Chinese Journal of Chemical Physics》1991年第4期249-254,共6页化学物理学报（英文）

基　　金：国家自然科学基金

摘　　要：本文采用CW超声分子束以及时间分辨质谱技术研究在紫外(355nm)和可见(560nm)激光照射下Cl_2和InP(100)表面反应产物的质量分布.同时以调制分子束技术和锁相放大探测方法研究了在表面温度300K-800K范围内Cl_2和Inp(100)热反应产物的质量分布。并测定了主要产物信号InCl^+,InCl_2^+,PCl^+,PCl_2^+,PCl_3^+的信号强度与表面温度的关系,对于反应机理作了讨论.The mass distribution of the products for the Cl_2 and InP(100)surface reaction under 355nm and 560nm laser irradiation has been studied using CW supersonic molecular beam technique coupled with time resolved mass spectrometry. The mass distribution of the products for thermal reaction at surface temperature range of 300K-750K has also been studied by a chopped molecular beam and quadrupole mass spectroscopy using Lock—in amplifier technique. Detailed analysis of the surface temperature dependence of the ion singals of the products InCl^+、 InCl_2^+、 PCl^+、 PCl_2^+、 PCl_3^+ is performed. The mechanism of the reaction is discussed.

关 键 词：氯 分子束 INP 蚀该反应 半导体 

分 类 号：TN304.23[电子电信—物理电子学]