半桥式功率输出级中高速低功耗低侧管的实现  

Realization of a Low Side Device with High Speed and Low Power Dissipation in Half Bridge Power Output Section

作　　者：杨洪强[1] 陈星弼[1] 

机构地区：[1]电子科技大学微电子所,四川成都610054

出　　处：《电子学报》2001年第6期814-815,共2页Acta Electronica Sinica

基　　金：国家自然科学基金!(No 6 9776 0 41)

摘　　要：本文提出了一种动态地控制IGBT阳极短路的结构 ,并把这种结构用于具有高低侧驱动和半桥式功率输出级的功率集成电路低侧管中 .这种结构使得功率输出级低侧管导通时工作于IGBT模式 ,关断过程中工作于MOS模式 ,因而具有导通压降小、关断速度快的优点 ,有效地解决了功率管导通电阻和关断速度之间的矛盾 .在不改变工艺 ,不降低耐压 ,不增加电路元件的前提下 。A structure with dynamically controlled anode-short is brought forward, and can be used in the low-side device of power IC with high-side and low-side drive and half-bridge output section. By using this structure the low-side device can operate in IGBT mode while in MOS mode when turning off. This takes it a low forward voltage drop and high switch speed, and resolves the contradiction between on-resistance and turning off time effectively. Then a low-side device with high speed and low power dissipation is realized without depressing breakdown voltage, changing process and additional circuit devices.

关 键 词：功率集成电路 动态控制阳极短路 高低侧驱动 半桥式功率输出 低侧管 晶体管 

分 类 号：TN322[电子电信—物理电子学]