接近式深度光刻机掩模-硅片间的衍射研究  

An Investigation on Diffraction between Mask and Wafer of Proximity Deep Stepper

作　　者：余国彬[1] 姚汉民[1] 胡松[1] 

机构地区：[1]中国科学院光电技术研究所,四川成都610209

出　　处：《电子工业专用设备》2001年第1期23-26,共4页Equipment for Electronic Products Manufacturing

摘　　要：:近年来 ,微型机电系统技术高速发展 ,对作为其基础技术的微细加工设备的需求也越来越大。重点讨论接近式深度光刻机的掩摸和硅片间的衍射 ,其中对掩模与硅片间的夫琅和费衍射和菲涅尔衍射进行了区别 ,并提出了接近深度光刻机掩模-硅片间的衍射应属于菲涅尔衍射 ,同时具体分析单缝型掩模的菲涅尔衍射公式。对深入理解和认识接近式深度光刻机的掩模 -硅片间衍射的物理本质提供了更为方便的研究手段。In the recent years,demands of microfabrication equipment which is a basic technique of MEMS are increasing along with the rapid development of MEMS. In the text,we discuss the diffraction between mask and wafer of proximity deep stepper.The difference of fraunhoffer diffraction and fresnel diffraction is distinguished,We bring forward that the diffraction between mask and wafer is fresnel diffraction,and also analyse the formula of fresnel diffraction for single-gap mask.It provides more convenient research means for understand the physical essence of diffraction between mask and wafer of proximity deep stepper.

关 键 词：微型机电系统 接近式浓度光刻机 菲涅尔衍射 掩膜 硅片 

分 类 号：TN305.7[电子电信—物理电子学]