多量子阱的电子干涉及引起的光电流特性  

Electron Interference above Barrier for Multiquantum Well and Its Photocurrent Characteristics

作　　者：程兴奎[1] 周均铭[2] 黄绮[2] 

机构地区：[1]山东大学光电材料与器件研究所,山东济南250100 [2]中国科学院物理研究所,北京100080

出　　处：《半导体光电》2001年第3期166-168,共3页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目! (6 9976 0 16 );山东省自然科学基金资助课题!(Y98G1110 7)

摘　　要：根据电子干涉理论分析指出 :多量子阱结构势垒以上的电子 ,由于其干涉效应形成一些分立的弱干涉非定域态。当存在光激发时 ,量子阱中基态电子可跃迁到这些弱干涉非定域态上 ,在外电场作用下形成光电流谱的多峰结构。理论计算出的几个光电流峰位置与实验测量的结果符合较好。On the basis of theory of electron interference, it is pointed out that there are a series of separate weak interference non-localized states above barrier for multiquantum well. When photoexcitation of electron occurs, the electrons on ground state in quantum well can be excited to the weak interference non-localized states above barrier and several photocurrent peaks will be formed under conditions of external electric field. The calculated positions of several photocurrent peaks are in good agreement with the experimental results.

关 键 词：多量子阱 电子干涉 光电流特性 电子波动 

分 类 号：O471.1[理学—半导体物理]