XRD对ZnO薄膜生长条件和退火工艺的优化  

Optimization of Growing and Annealing Parameters by XRD

作　　者：王金忠[1] 闫玮[1] 王新强[1] 殷景志[1] 姜秀英[1] 杨树人[1] 杜国同[1] 高鼎三[1] Xiang Liu Hui Cao Junying Xu R.P.H.Chang 

机构地区：[1]吉林大学电子工程系,吉林长春130023 [2]美国西北大学材料研究中心,,伊利诺斯60208

出　　处：《半导体光电》2001年第3期169-172,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目! (6 9896 2 6 0 ;5 9910 16 1983);吉林省科学基金资助项目! (19990 5 18- 1)

摘　　要：利用等离子体MOCVD设备在 (0 0 1)蓝宝石上生长了ZnO薄膜。通过对在不同条件下生长的薄膜样品X射线衍射的测量和分析 ,优化了薄膜的生长条件 ,长出了半高宽仅为 0 .15°的单一取向的高质量ZnO薄膜 ,并发现生长过程中多次退火或掺氮在薄膜中引入了张应力 ,而生长结束后一次退火却引入了压应力。ZnO films are grown on (001) sapphire substrate by plasma-assisted MOCVD. After investigation and analysis of the samples by XRD, the growing and annealing parameters are optimized and high-quality ZnO film with 0.15° FWHM is obtained. Moreover, it is found that there is tensile stress in the samples doped with nitrogen or resulting from annealing for many times during the growing process, while compressive stress will occur in the samples annealing for only once after growth.

关 键 词：等离子体MOCVD X射线衍射 氧化锌薄膜 退火工艺 生长条件 

分 类 号：TN304.055[电子电信—物理电子学]