SSP衬底上多晶硅薄膜电池的研究  

Investigation of Thin Film Solar Cell on SSP Substrate

作　　者：郜小勇[1] 卢景霄[1] 李仲明[2] 许颖[2] 励旭东[2] 

机构地区：[1]郑州大学物理工程学院,郑州450052 [2]北京市太阳能研究所,北京100038

出　　处：《郑州大学学报（自然科学版）》2001年第2期39-41,共3页Journal of Zhengzhou University (Natural Science)

摘　　要：从简化步骤、降低成本的角度出发 ,采用快速热化学气相沉积 (RTCVD)法在低纯颗粒带硅 (SSP)衬底上制备出了多晶硅薄膜太阳电池 .测试结果表明 ,实验室制备的无钝化、无减发射膜的多晶硅薄膜太阳电池获得了 3 .5 7%的转换效率 .并在此基础上提出采用氢钝化、减反射、快速生长和隔离技术 。Polycrystalline silicon thin film solar cell by RTCVD on SSP substrate is prepared so as to simplify the process and lower the cost. The result of measurement demonstrates polycrystalline silicon thin film solar cell without passivation layer and anti reflection film gains the efficiency of 3.57 %. And on the basis, hydrogen passivation technology, anti reflection technology, rapid growth technology and isolation technology are put forward, with the expectation of a further increase in efficiency.

关 键 词：颗粒带硅 热化学 气相沉积 多晶硅薄膜 太阳电池 转换效率 氢钝化 快速生长 

分 类 号：TM914.4[电气工程—电力电子与电力传动]