共溅射和离子注入制备的SiO_2(Eu)薄膜中Eu^(3+)到Eu^(2+)的转变  

THE TRANSITION FROM Eu^(3+)TO Eu^(2+) IN SiO 2(Eu) THIN FILMS PREPARED BY ION IMPLANTATION AND CO\|SPUTTERING

作　　者：刘丰珍[1] 朱美芳[1] 刘涛[2] 李秉程 

机构地区：[1]中国科学技术大学研究生院物理系 [2]中国科学院高能物理研究所同步辐射实验室,北京100039 [3]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2001年第3期532-535,共4页Acta Physica Sinica

摘　　要：采用共溅射方法和Eu离子注入热生长的SiO2 方法得到SiO2 (Eu)薄膜 ,Eu离子的浓度为 4%和 0 .5 % .对样品X射线吸收近边结构 (XANES)的研究和分析表明 ,在高温氮气中发生了Eu3+向Eu2 +的转变 .SiO2 (Eu)Eu ions doped SiO 2 thin films, SiO 2(Eu), were prepared by co\|sputtering of SiO 2 and Eu 2O 3 and Eu ion implantation into thermally grown SiO 2 films. The Eu\| L 3\|edge X\|ray absorption near edge structure (XANES) spectra of SiO 2(Eu) films show a doublet absorption peak structure with energy difference of 7?eV, which indicates the conversion of Eu 3+ to Eu 2+ at high annealing temperature in N 2. The strong blue luminescence of SiO 2(Eu) films prepared by ions implantation after films annealed above 1100?℃ confirms the above argument.

关 键 词：XANES 共溅射 铕离子注入 二氧化硅薄膜 稀土掺杂半导体材料 

分 类 号：TN304[电子电信—物理电子学]